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199,570 part records

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RN2103,LF(CT

Toshiba · Package: SSM-3

Bipolar Transistors - Pre-Biased PNP BRT, Q1BSR=22kOhm, Q1BER=22kOhm, VCEO=-50V, IC=-0.1A, inSOT-416 (SSM) package

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RN1116,LF(CT

Toshiba · Package: SSM-3

Bipolar Transistors - Pre-Biased TRANSISTOR NPN BRT, Q1BSR=4.7kOhm, Q1BER=10kOhm, VCEO=50V, IC=0.1A, inSOT-416 (SSM) package

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RN2113,LF(CT

Toshiba · Package: SSM-3

Bipolar Transistors - Pre-Biased PNP BRT, Q1BSR=47kOhm, Q1BER=InfinitykOhm, VCEO=-50V, IC=-0.1A, inSOT-416 (SSM) package

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RN2303,LF

Toshiba · Package: USM-3

Bipolar Transistors - Pre-Biased TRANSISTOR PNP BRT, Q1BSR=22kOhm, Q1BER=22kOhm, VCEO=-50V, IC=-0.1A, inSOT-323 (USM) package

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RN2411,LF

Toshiba · Package: SC-59-3

Bipolar Transistors - Pre-Biased PNP BRT, Q1BSR=10kOhm, Q1BER=InfinitykOhm, VCEO=-50V, IC=-0.1A, inSOT-346 (S-Mini) package

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RN1415,LF

Toshiba · Package: SC-59-3

Bipolar Transistors - Pre-Biased NPN BRT, Q1BSR=2.2kOhm, Q1BER=10kOhm, VCEO=50V, IC=0.1A, inSOT-346 (S-Mini) package

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RN1711JE(TE85L,F)

Toshiba · Package: ESV-5

Bipolar Transistors - Pre-Biased TRANSISTOR NPN x2 BRT, Q1BSR=10kOhm, Q1BER=Inf.kOhm, Q2BSR=10kOhm, Q2BER=Inf.kOhm, VCEO=50V, IC=0.1A

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TTA1713-GR,LF

Toshiba · Package: SMD-3

Bipolar Transistors - Pre-Biased PNP Transistor, VCEO=-45V, IC=-0.5A, hFE=180 to 390 in SOT-346 (S-Mini) package

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RN2707,LF

Toshiba · Package: USV-5

Bipolar Transistors - Pre-Biased PNP x 2 BRT, Q1BSR=10kOhm, Q1BER=47kOhm, Q2BSR=10kOhm, Q2BER=47kOhm, VCEO=-50V, IC=-0.1A

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RN1706,LF

Toshiba · Package: USV-5

Bipolar Transistors - Pre-Biased NPN x 2 BRT, Q1BSR=4.7kOhm, Q1BER=47kOhm, Q2BSR=4.7kOhm, Q2BER=47kOhm, VCEO=50V, IC=0.1A

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RN1705,LF

Toshiba · Package: USV-5

Bipolar Transistors - Pre-Biased NPN x 2 BRT, Q1BSR=2.2kOhm, Q1BER=47kOhm, Q2BSR=2.2kOhm, Q2BER=47kOhm, VCEO=50V, IC=0.1A

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RN1701,LF

Toshiba · Package: USV-5

Bipolar Transistors - Pre-Biased NPN x 2 BRT, Q1BSR=4.7kOhm, Q1BER=4.7kOhm, Q2BSR=4.7kOhm, Q2BER=4.7kOhm, VCEO=50V, IC=0.1A

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RN2909,LF(CT

Toshiba · Package: US-6

Bipolar Transistors - Pre-Biased PNP x 2 BRT, Q1BSR=47kOhm, Q1BER=22kOhm, Q2BSR=47kOhm, Q2BER=22kOhm, VCEO=-50V, IC=-0.1A

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RN4903,LF(CT

Toshiba · Package: US-6

Bipolar Transistors - Pre-Biased PNP + NPN BRT, Q1BSR=22kOhm, Q1BER=22kOhm, Q2BSR=22kOhm, Q2BER=22kOhm, VCEO=-50V, IC=-0.1A

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RN2709,LF

Toshiba · Package: USV-5

Bipolar Transistors - Pre-Biased PNP x 2 BRT, Q1BSR=22kOhm, Q1BER=47kOhm, Q2BSR=22kOhm, Q2BER=47kOhm, VCEO=-50V, IC=-0.1A

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RN1904FE,LF(CT

Toshiba · Package: ES-6

Bipolar Transistors - Pre-Biased NPN x 2 BRT, Q1BSR=47kOhm, Q1BER=47kOhm, Q2BSR=47kOhm, Q2BER=47kOhm, VCEO=50V, IC=0.1A

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RN4985FE,LF(CT

Toshiba · Package: ES-6

Bipolar Transistors - Pre-Biased NPN + PNP BRT, Q1BSR=2.2kOhm, Q1BER=47kOhm, Q2BSR=2.2kOhm, Q2BER=47kOhm, VCEO=50V, IC=0.1A

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RN2108,LF(CT

Toshiba · Package: SMD-3

Bipolar Transistors - Pre-Biased PNP BRT, Q1BSR=22kOhm, Q1BER=47kOhm, VCEO=-50V, IC=-0.1A, inSOT-416 (SSM) package

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RN1108MFV,L3F

Toshiba · Package: VESM-3

Bipolar Transistors - Pre-Biased TRANSISTOR NPN BRT, Q1BSR=22kOhm, Q1BER=47kOhm, VCEO=50V, IC=0.1A, inSOT-723 (VESM) package

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RN1303,LF

Toshiba · Package: USM-3

Bipolar Transistors - Pre-Biased TRANSISTOR NPN BRT, Q1BSR=22kOhm, Q1BER=22kOhm, VCEO=50V, IC=0.1A, inSOT-323 (USM) package

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