Toshiba
RN1108MFV,L3F
Bipolar Transistors - Pre-Biased TRANSISTOR NPN BRT, Q1BSR=22kOhm, Q1BER=47kOhm, VCEO=50V, IC=0.1A, inSOT-723 (VESM) package
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - Pre-Biased
- Series
- RN1108
- Package
- VESM-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
10 parameters- Configuration
- Single
- Transistor Polarity
- NPN
- DC Collector/Base Gain hfe Min
- 80
- Collector- Emitter Voltage VCEO Max
- 50 V
- Pd - Power Dissipation
- 150 mW
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Collector- Base Voltage VCBO
- 50 V
- Emitter- Base Voltage VEBO
- 7 V
- Maximum DC Collector Current
- 100 mA
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.