Toshiba
RN4985FE,LF(CT
Bipolar Transistors - Pre-Biased NPN + PNP BRT, Q1BSR=2.2kOhm, Q1BER=47kOhm, Q2BSR=2.2kOhm, Q2BER=47kOhm, VCEO=50V, IC=0.1A
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - Pre-Biased
- Series
- RN4985
- Package
- ES-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
10 parameters- Configuration
- Dual
- Transistor Polarity
- NPN, PNP
- DC Collector/Base Gain hfe Min
- 80
- Collector- Emitter Voltage VCEO Max
- - 50 V, 50 V
- Pd - Power Dissipation
- 100 mW
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Collector- Base Voltage VCBO
- - 50 V, 50 V
- Emitter- Base Voltage VEBO
- - 5 V, 5 V
- Maximum DC Collector Current
- - 100 mA, 100 mA
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.