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199,570 part records

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RN2710,LF

Toshiba · Package: USV-5

Bipolar Transistors - Pre-Biased PNP x 2 BRT, Q1BSR=47kOhm, Q1BER=22kOhm, Q2BSR=47kOhm, Q2BER=22kOhm, VCEO=-50V, IC=-0.1A

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RN2901,LF(CT

Toshiba · Package: US-6

Bipolar Transistors - Pre-Biased PNP x 2 BRT, Q1BSR=4.7kOhm, Q1BER=4.7kOhm, Q2BSR=4.7kOhm, Q2BER=4.7kOhm, VCEO=-50V, IC=-0.1A

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RN2708,LF

Toshiba · Package: USV-5

Bipolar Transistors - Pre-Biased PNP x 2 BRT, Q1BSR=10kOhm, Q1BER=47kOhm, Q2BSR=10kOhm, Q2BER=47kOhm, VCEO=-50V, IC=-0.1A

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RN4911,LF(CT

Toshiba · Package: ES-6

Bipolar Transistors - Pre-Biased PNP + NPN BRT, Q1BSR=4.7kOhm, Q1BER=Inf.kOhm, Q2BSR=4.7kOhm, Q2BER=Inf.kOhm, VCEO=-50V, IC=-0.1A

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RN2910,LF(CT

Toshiba · Package: US-6

Bipolar Transistors - Pre-Biased PNP x 2 BRT, Q1BSR=4.7kOhm, Q1BER=Inf.kOhm, Q2BSR=4.7kOhm, Q2BER=Inf.kOhm, VCEO=-50V, IC=-0.1A

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RN1908,LF(CT

Toshiba · Package: US-6

Bipolar Transistors - Pre-Biased NPN x 2 BRT, Q1BSR=22kOhm, Q1BER=47kOhm, Q2BSR=22kOhm, Q2BER=47kOhm, VCEO=50V, IC=0.1A

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RN4908,LF(CT

Toshiba · Package: US-6

Bipolar Transistors - Pre-Biased PNP + NPN BRT, Q1BSR=10kOhm, Q1BER=47kOhm, Q2BSR=10kOhm, Q2BER=47kOhm, VCEO=-50V, IC=-0.1A

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RN4909,LF(CT

Toshiba · Package: SMD-6

Bipolar Transistors - Pre-Biased PNP + NPN BRT, Q1BSR=22kOhm, Q1BER=47kOhm, Q2BSR=22kOhm, Q2BER=47kOhm, VCEO=-50V, IC=-0.1A

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RN1911,LF(CT

Toshiba · Package: US-6

Bipolar Transistors - Pre-Biased NPN x 2 BRT, Q1BSR=10kOhm, Q1BER=Inf.kOhm, Q2BSR=10kOhm, Q2BER=Inf.kOhm, VCEO=50V, IC=0.1A

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RN2908,LF(CT

Toshiba · Package: US-6

Bipolar Transistors - Pre-Biased PNP x 2 BRT, Q1BSR=22kOhm, Q1BER=47kOhm, Q2BSR=22kOhm, Q2BER=47kOhm, VCEO=-50V, IC=-0.1A

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RN1909,LF(CT

Toshiba · Package: US-6

Bipolar Transistors - Pre-Biased NPN x 2 BRT, Q1BSR=47kOhm, Q1BER=22kOhm, Q2BSR=47kOhm, Q2BER=22kOhm, VCEO=50V, IC=0.1A

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RN2907,LF(CT

Toshiba · Package: US-6

Bipolar Transistors - Pre-Biased PNP x 2 BRT, Q1BSR=10kOhm, Q1BER=47kOhm, Q2BSR=10kOhm, Q2BER=47kOhm, VCEO=-50V, IC=-0.1A

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RN4989FE,LF(CT

Toshiba · Package: ES-6

Bipolar Transistors - Pre-Biased NPN + PNP BRT, Q1BSR=47kOhm, Q1BER=22kOhm, Q2BSR=47kOhm, Q2BER=22kOhm, VCEO=50V, IC=0.1A

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RN2906FE,LF(CT

Toshiba · Package: ES-6

Bipolar Transistors - Pre-Biased PNP x 2 BRT, Q1BSR=4.7kOhm, Q1BER=47kOhm, Q2BSR=4.7kOhm, Q2BER=47kOhm, VCEO=-50V, IC=-0.1A

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RN1903FE,LF(CT

Toshiba · Package: ES-6

Bipolar Transistors - Pre-Biased NPN x 2 BRT, Q1BSR=22kOhm, Q1BER=22kOhm, Q2BSR=22kOhm, Q2BER=22kOhm, VCEO=50V, IC=0.1A

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RN4988FE,LF(CT

Toshiba · Package: ES-6

Bipolar Transistors - Pre-Biased NPN + PNP BRT, Q1BSR=22kOhm, Q1BER=47kOhm, Q2BSR=22kOhm, Q2BER=47kOhm, VCEO=50V, IC=0.1A

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RN4901FE,LF(CT

Toshiba · Package: ES-6

Bipolar Transistors - Pre-Biased PNP + NPN BRT, Q1BSR=4.7kOhm, Q1BER=4.7kOhm, Q2BSR=4.7kOhm, Q2BER=4.7kOhm, VCEO=-50V, IC=-0.1A

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RN4991FE,LF(CT

Toshiba · Package: ES-6

Bipolar Transistors - Pre-Biased NPN + PNP BRT, Q1BSR=10kOhm, Q1BER=Inf.kOhm, Q2BSR=10kOhm, Q2BER=Inf.kOhm, VCEO=50V, IC=0.1A

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RN1902FE,LF(CT

Toshiba · Package: ES-6

Bipolar Transistors - Pre-Biased NPN x 2 BRT, Q1BSR=10kOhm, Q1BER=10kOhm, Q2BSR=10kOhm, Q2BER=10kOhm, VCEO=50V, IC=0.1A

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RN2104,LF(CT

Toshiba · Package: SSM-3

Bipolar Transistors - Pre-Biased PNP BRT, Q1BSR=47kOhm, Q1BER=47kOhm, VCEO=-50V, IC=-0.1A, inSOT-416 (SSM) package

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