Toshiba
RN1902FE,LF(CT
Bipolar Transistors - Pre-Biased NPN x 2 BRT, Q1BSR=10kOhm, Q1BER=10kOhm, Q2BSR=10kOhm, Q2BER=10kOhm, VCEO=50V, IC=0.1A
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - Pre-Biased
- Series
- RN1902
- Package
- ES-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
10 parameters- Configuration
- Dual
- Transistor Polarity
- NPN
- DC Collector/Base Gain hfe Min
- 50
- Collector- Emitter Voltage VCEO Max
- 50 V
- Pd - Power Dissipation
- 100 mW
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Collector- Base Voltage VCBO
- 50 V
- Emitter- Base Voltage VEBO
- 10 V
- Maximum DC Collector Current
- 100 mA
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.