Toshiba
RN2910,LF(CT
Bipolar Transistors - Pre-Biased PNP x 2 BRT, Q1BSR=4.7kOhm, Q1BER=Inf.kOhm, Q2BSR=4.7kOhm, Q2BER=Inf.kOhm, VCEO=-50V, IC=-0.1A
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - Pre-Biased
- Series
- RN2910
- Package
- US-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
11 parameters- Configuration
- Dual
- Transistor Polarity
- PNP
- DC Collector/Base Gain hfe Min
- 120
- Collector- Emitter Voltage VCEO Max
- - 50 V
- Pd - Power Dissipation
- 200 mW
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Collector- Base Voltage VCBO
- - 50 V
- DC Current Gain hFE Max
- 400
- Emitter- Base Voltage VEBO
- - 5 V
- Maximum DC Collector Current
- - 100 mA
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.