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Discrete and Power Semiconductors

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199,570 part records
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TTA1713-Y,LF

Toshiba · Package: SMD-3

Bipolar Transistors - Pre-Biased PNP Transistor, VCEO=-45V, IC=-0.5A, hFE=120 to 270 in SOT-346 (S-Mini) package
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RN1707,LF

Toshiba · Package: USV-5

Bipolar Transistors - Pre-Biased NPN x 2 BRT, Q1BSR=10kOhm, Q1BER=47kOhm, Q2BSR=10kOhm, Q2BER=47kOhm, VCEO=50V, IC=0.1A
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RN2703,LF

Toshiba · Package: USV-5

Bipolar Transistors - Pre-Biased PNP x 2 BRT, Q1BSR=22kOhm, Q1BER=22kOhm, Q2BSR=22kOhm, Q2BER=22kOhm, VCEO=-50V, IC=-0.1A
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RN2714,LF

Toshiba · Package: USV-5

Bipolar Transistors - Pre-Biased PNP x 2 BRT, Q1BSR=1kOhm, Q1BER=10kOhm, Q2BSR=1kOhm, Q2BER=10kOhm, VCEO=-50V, IC=-0.1A
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RN1703,LF

Toshiba · Package: USV-5

Bipolar Transistors - Pre-Biased NPN x 2 BRT, Q1BSR=22kOhm, Q1BER=22kOhm, Q2BSR=22kOhm, Q2BER=22kOhm, VCEO=50V, IC=0.1A
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RN1702,LF

Toshiba · Package: USV-5

Bipolar Transistors - Pre-Biased NPN x 2 BRT, Q1BSR=10kOhm, Q1BER=10kOhm, Q2BSR=10kOhm, Q2BER=10kOhm, VCEO=50V, IC=0.1A
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RN2105,LF(CT

Toshiba · Package: SSM-3

Bipolar Transistors - Pre-Biased PNP BRT, Q1BSR=2.2kOhm, Q1BER=47kOhm, VCEO=-50V, IC=-0.1A, inSOT-416 (SSM) package
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RN2706,LF

Toshiba · Package: USV-5

Bipolar Transistors - Pre-Biased PNP x 2 BRT, Q1BSR=4.7kOhm, Q1BER=47kOhm, Q2BSR=4.7kOhm, Q2BER=47kOhm, VCEO=-50V, IC=-0.1A
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RN2705,LF

Toshiba · Package: USV-5

Bipolar Transistors - Pre-Biased PNP x 2 BRT, Q1BSR=2.2kOhm, Q1BER=47kOhm, Q2BSR=2.2kOhm, Q2BER=47kOhm, VCEO=-50V, IC=-0.1A
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RN2701,LF

Toshiba · Package: USV-5

Bipolar Transistors - Pre-Biased PNP x 2 BRT, Q1BSR=4.7kOhm, Q1BER=4.7kOhm, Q2BSR=4.7kOhm, Q2BER=4.7kOhm, VCEO=-50V, IC=-0.1A
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RN1708,LF

Toshiba · Package: USV-5

Bipolar Transistors - Pre-Biased NPN x 2 BRT, Q1BSR=22kOhm, Q1BER=47kOhm, Q2BSR=22kOhm, Q2BER=47kOhm, VCEO=50V, IC=0.1A
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RN1710,LF

Toshiba · Package: USV-6

Bipolar Transistors - Pre-Biased NPN x 2 BRT, Q1BSR=4.7kOhm, Q1BER=Inf.kOhm, Q2BSR=4.7kOhm, Q2BER=Inf.kOhm, VCEO=50V, IC=0.1A
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RN1709,LF

Toshiba · Package: USV-5

Bipolar Transistors - Pre-Biased NPN x 2 BRT, Q1BSR=47kOhm, Q1BER=22kOhm, Q2BSR=47kOhm, Q2BER=22kOhm, VCEO=50V, IC=0.1A
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RN2704,LF

Toshiba · Package: USV-6

Bipolar Transistors - Pre-Biased PNP x 2 BRT, Q1BSR=22kOhm, Q1BER=22kOhm, Q2BSR=22kOhm, Q2BER=22kOhm, VCEO=-50V, IC=-0.1A
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RN2702,LF

Toshiba · Package: USV-5

Bipolar Transistors - Pre-Biased TRANSISTOR PNP x 2 BRT, Q1BSR=10kOhm, Q1BER=10kOhm, Q2BSR=10kOhm, Q2BER=10kOhm, VCEO=-50V, IC=-0.1A
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RN2711(TE85L,F)

Toshiba · Package: SOT-353-5

Bipolar Transistors - Pre-Biased BRT PNP 2-in-1 Ic -100mA -50V VCEO
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RN1704,LF

Toshiba · Package: USV-5

Bipolar Transistors - Pre-Biased NPN x 2 BRT, Q1BSR=47kOhm, Q1BER=47kOhm, Q2BSR=47kOhm, Q2BER=47kOhm, VCEO=50V, IC=0.1A
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RN2109,LF(CT

Toshiba · Package: SMD-3

Bipolar Transistors - Pre-Biased PNP BRT, Q1BSR=47kOhm, Q1BER=22kOhm, VCEO=-50V, IC=-0.1A, inSOT-416 (SSM) package
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