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Toshiba

RN2711(TE85L,F)

Bipolar Transistors - Pre-Biased BRT PNP 2-in-1 Ic -100mA -50V VCEO

Basic Information

View Datasheet ↗
Manufacturer
Toshiba
Product Category
Bipolar Transistors - Pre-Biased
Series
RN2711
Package
SOT-353-5
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

10 parameters
Configuration
Dual
Transistor Polarity
PNP
Typical Input Resistor
10 kOhms
DC Collector/Base Gain hfe Min
120
Collector- Emitter Voltage VCEO Max
- 50 V
Continuous Collector Current
- 100 mA
Pd - Power Dissipation
200 mW
Emitter- Base Voltage VEBO
- 5 V
Maximum DC Collector Current
- 100 mA
Unit Weight
0.000212 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

RN2711(TE85L,F) Specifications and Datasheet | ChipSourceHub