Microchip / Microsemi
1214-30
RF Bipolar Transistors L-Band/Bipolar Radar Transistor
Basic Information
View Datasheet ↗- Manufacturer
- Microchip
- Brand
- Microchip / Microsemi
- Product Category
- RF Bipolar Transistors
- Package
- 55AW-1
- Mounting Style
- SMD/SMT
- RoHS
- Compliant (source record)
Technical Specifications
13 parameters- Transistor Type
- Bipolar
- Technology
- Si
- Transistor Polarity
- NPN
- DC Collector/Base Gain hfe Min
- 20
- Collector- Emitter Voltage VCEO Max
- 50 V
- Emitter- Base Voltage VEBO
- 3.5 V
- Continuous Collector Current
- 4 A
- Maximum Operating Temperature
- + 200 C
- Configuration
- Single
- Operating Frequency
- 1.2 GHz to 1.4 GHz
- Output Power
- 30 W
- Maximum DC Collector Current
- 4 A
Show more parameters (1)
- Pd - Power Dissipation
- 88 W
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.