Central Semiconductor
BC857BT
Bipolar Transistors - BJT PNP GEN PURPOSE
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- BC857
- Packaging
- Reel
- RoHS
- Compliant (source record)
Technical Specifications
11 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 45 V
- Collector- Base Voltage VCBO
- 50 V
- Emitter- Base Voltage VEBO
- 5 V
- Maximum DC Collector Current
- 0.1 A
- Gain Bandwidth Product fT
- 250 MHz
- Maximum Operating Temperature
- + 150 C
- DC Collector/Base Gain hfe Min
- 250
- Pd - Power Dissipation
- 250 mW
- Part # Aliases
- BC857BT TR
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.