Infineon Technologies
BFP 540 H6327
RF Bipolar Transistors RF BIP TRANSISTOR
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- RF Bipolar Transistors
- Series
- BFP540
- Package
- SOT-343
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
20 parameters- Transistor Type
- Bipolar
- Technology
- Si
- Transistor Polarity
- NPN
- DC Collector/Base Gain hfe Min
- 50
- Collector- Emitter Voltage VCEO Max
- 4.5 V
- Emitter- Base Voltage VEBO
- 1 V
- Continuous Collector Current
- 0.08 A
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Configuration
- Single
- Collector- Base Voltage VCBO
- 14 V
- Height
- 0.9 mm
Show more parameters (8)
- Length
- 2 mm
- Operating Frequency
- 30000 MHz
- Operating Temperature Range
- - 65 C to + 150 C
- Type
- RF Bipolar Small Signal
- Width
- 1.25 mm
- Pd - Power Dissipation
- 250 mW
- Part # Aliases
- BFP540H6327XTSA1 BFP54H6327XT SP000745288
- Unit Weight
- 0.000243 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.