STMicroelectronics
BUL416T
Bipolar Transistors - BJT NPN HI-VOLT FAST SW
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- Bipolar Transistors - BJT
- Series
- BUL416T
- Package
- TO-220-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
13 parameters- Transistor Polarity
- NPN
- Collector- Emitter Voltage VCEO Max
- 800 V
- Emitter- Base Voltage VEBO
- 9 V
- Maximum DC Collector Current
- 9 A
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 32
- Height
- 15.25 mm
- Length
- 10 mm
- Width
- 4.4 mm
- Continuous Collector Current
- 6 A
- DC Collector/Base Gain hfe Min
- 18
- Pd - Power Dissipation
- 110 W
Show more parameters (1)
- Unit Weight
- 0.081130 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.