NXP Semiconductors
A3G35H100-04SR3
RF MOSFET Transistors Airfast RF Power GaN Transistor, 3400-3600 MHz, 14 W Avg., 48 V
Basic Information
View Datasheet ↗- Manufacturer
- NXP
- Brand
- NXP Semiconductors
- Product Category
- RF MOSFET Transistors
- Package
- NI-780S-4L
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Transistor Polarity
- Dual N-Channel
- Technology
- Si
- Id - Continuous Drain Current
- 8.04 mA
- Vds - Drain-Source Breakdown Voltage
- 125 V
- Gain
- 14 dB
- Output Power
- 14 W
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Operating Frequency
- 3400 MHz to 3600 MHz
- Type
- RF Power MOSFET
- Number of Channels
- 2 Channel
- Vgs - Gate-Source Voltage
- - 8 V
Show more parameters (2)
- Vgs th - Gate-Source Threshold Voltage
- - 2.3 V
- Part # Aliases
- 935368927128
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.