Central Semiconductor
2N5786
Bipolar Transistors - BJT NPN Ampl/Switch
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N5786
- Package
- TO-39-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- T
Technical Specifications
13 parameters- Transistor Polarity
- NPN
- Collector- Emitter Voltage VCEO Max
- 40 V
- Collector- Base Voltage VCBO
- 45 V
- Emitter- Base Voltage VEBO
- 3.5 V
- Collector-Emitter Saturation Voltage
- 1 V
- Maximum DC Collector Current
- 3.5 A
- Gain Bandwidth Product fT
- 4 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 200 C
- DC Current Gain hFE Max
- 120
- DC Collector/Base Gain hfe Min
- 4 at 1.6 A, 2 V
- Pd - Power Dissipation
- 10000 mW
Show more parameters (1)
- Part # Aliases
- 2N5786 TIN/LEAD
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.