Microchip Technology
APT45GP120BG
IGBTs IGBT PT MOS 7 Single 1200 V 45 A TO-247
Basic Information
View Datasheet ↗- Manufacturer
- Microchip
- Brand
- Microchip Technology
- Product Category
- IGBTs
- Package
- TO-247-3
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
14 parameters- Technology
- Si
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 1.2 kV
- Collector-Emitter Saturation Voltage
- 3.3 V
- Maximum Gate Emitter Voltage
- - 20 V, 20 V
- Continuous Collector Current at 25 C
- 100 A
- Pd - Power Dissipation
- 625 W
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current Ic Max
- 100 A
- Country of Origin
- PH
- Gate-Emitter Leakage Current
- 100 nA
Show more parameters (2)
- Tradename
- POWER MOS 7 IGBT
- Unit Weight
- 1.340411 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.