Qorvo
QPD1009TR7
GaN FETs DC-4 GHz, 15W, 50V GaN RF Tr
Basic Information
View Datasheet ↗- Manufacturer
- Qorvo
- Product Category
- GaN FETs
- Package
- SMD-16
- Mounting Style
- SMD/SMT
- Packaging
- Reel
Technical Specifications
15 parameters- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 145 V
- Id - Continuous Drain Current
- 1.6 A
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 85 C
- Pd - Power Dissipation
- 16 W
- Configuration
- Single
- Country of Origin
- US
- Gain
- 26.8 dB
- Maximum Operating Frequency
- 4 GHz
- Minimum Operating Frequency
- 1 GHz
- Output Power
- 42.4 dBm
Show more parameters (3)
- Product
- RF Transistors
- Technology
- GaN
- Type
- GaN RF Transistor
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.