NXP Semiconductors
MW6S010GNR1
RF MOSFET Transistors HV6 900MHZ 10W
Basic Information
View Datasheet ↗- Manufacturer
- NXP
- Brand
- NXP Semiconductors
- Product Category
- RF MOSFET Transistors
- Series
- MW6S010N
- Package
- TO-270-2
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- E
Technical Specifications
20 parameters- Transistor Polarity
- N-Channel
- Technology
- Si
- Vds - Drain-Source Breakdown Voltage
- 68 V
- Gain
- 18 dB
- Output Power
- 10 W
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Configuration
- Single
- Height
- 2.08 mm
- Length
- 9.7 mm
- Operating Frequency
- 1.5 GHz
- Type
- RF Power MOSFET
Show more parameters (8)
- Width
- 5.97 mm
- Channel Mode
- Enhancement
- Moisture Sensitive
- Yes
- Pd - Power Dissipation
- 61.4 W
- Vgs - Gate-Source Voltage
- 12 V
- Vgs th - Gate-Source Threshold Voltage
- 2.3 V
- Part # Aliases
- 935324159528
- Unit Weight
- 0.019330 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.