Diodes Incorporated
MMDT3946LP4-7
Bipolar Transistors - BJT BIPOLAR COMP.
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Series
- MMDT39
- Package
- DFN1310H4-6
- Mounting Style
- SMD/SMT
- Packaging
- 300 MHz, 250 MHz
- RoHS
- Compliant (source record)
Technical Specifications
13 parameters- Transistor Polarity
- NPN, PNP
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 40 V
- Collector- Base Voltage VCBO
- - 40 V, 60 V
- Emitter- Base Voltage VEBO
- - 5 V, 6 V
- Collector-Emitter Saturation Voltage
- - 400 mV, 300 mV
- Maximum DC Collector Current
- - 200 mA, 200 mA
- Gain Bandwidth Product fT
- 300 MHz, 250 MHz
- Maximum Operating Temperature
- + 150 C
- Height
- 0.35 mm
- Length
- 1.3 mm
- Width
- 1 mm
Show more parameters (1)
- Pd - Power Dissipation
- 200 mW
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.