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Semelab / TT Electronics

2N2369ADCSM

Bipolar Transistors - BJT DUAL NPN SWITCHING TRANSISTORS

Basic Information

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Manufacturer
TT Electronics
Brand
Semelab / TT Electronics
Product Category
Bipolar Transistors - BJT
Mounting Style
SMD/SMT
Packaging
Bulk
RoHS
Compliant (source record)

Technical Specifications

14 parameters
Technology
Si
Transistor Polarity
NPN
Configuration
Dual
Collector- Emitter Voltage VCEO Max
15 V
Collector- Base Voltage VCBO
40 V
Emitter- Base Voltage VEBO
4.5 V
Collector-Emitter Saturation Voltage
200 mV
Maximum DC Collector Current
200 mA
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 200 C
DC Current Gain hFE Max
120 at 10 mA, 350 mV
DC Collector/Base Gain hfe Min
40 at 10 mA, 350 mV
Show more parameters (2)
Pd - Power Dissipation
360 mW
Unit Weight
0.000282 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

2N2369ADCSM Specifications and Datasheet | ChipSourceHub