Advanced Semiconductor, Inc.
MRF5812LF-CP
RF Bipolar Transistors RF Transistor
Basic Information
View Datasheet ↗- Manufacturer
- Advanced Semiconductor, Inc.
- Product Category
- RF Bipolar Transistors
- Series
- MRF5812LF
- Package
- SO-8
- Mounting Style
- SMD/SMT
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
11 parameters- Transistor Type
- Bipolar
- Technology
- Si
- Transistor Polarity
- NPN
- DC Collector/Base Gain hfe Min
- 50
- Collector- Emitter Voltage VCEO Max
- 15 V
- Emitter- Base Voltage VEBO
- 2.5 V
- Continuous Collector Current
- 200 mA
- Operating Frequency
- 5 GHz
- Maximum DC Collector Current
- 200 mA
- Pd - Power Dissipation
- 1.25 W
- Unit Weight
- 0.002610 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.