Infineon Technologies
BFQ19SH6327XTSA1
Bipolar Transistors - BJT RF BIP TRANSISTORS
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- Bipolar Transistors - BJT
- Package
- SOT-89-4
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
17 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 15 V
- Collector- Base Voltage VCBO
- 20 V
- Emitter- Base Voltage VEBO
- 3 V
- Gain Bandwidth Product fT
- 5.5 GHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 140
- Height
- 1.5 mm
- Length
- 4.5 mm
- Width
- 2.5 mm
Show more parameters (5)
- Continuous Collector Current
- 120 mA
- DC Collector/Base Gain hfe Min
- 70
- Pd - Power Dissipation
- 1 W
- Part # Aliases
- 19S BFQ H6327 SP001125294
- Unit Weight
- 0.004603 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.