Infineon Technologies
FS800R07A2E3B32BOSA1
IGBT Modules
Basic Information
- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- IGBT Modules
- Package
- HybirdPack2
- Mounting Style
- Through Hole
- Packaging
- Tray
- RoHS
- Compliant (source record)
Technical Specifications
13 parameters- Product
- IGBT Silicon Modules
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 650 V
- Collector-Emitter Saturation Voltage
- 1.4 V
- Continuous Collector Current at 25 C
- 800 A
- Gate-Emitter Leakage Current
- 400 nA
- Pd - Power Dissipation
- 1.5 kW
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 150 C
- Technology
- Si
- Maximum Gate Emitter Voltage
- 20 V
- Moisture Sensitive
- Yes
Show more parameters (1)
- Part # Aliases
- FS800R07A2E3_B32 SP001240894
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.