Microchip Technology
2N2896
Bipolar Transistors - BJT Power BJT
Basic Information
View Datasheet ↗- Manufacturer
- Microchip
- Brand
- Microchip Technology
- Product Category
- Bipolar Transistors - BJT
- Package
- TO-18
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Not compliant (source record)
Technical Specifications
14 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Maximum DC Collector Current
- 1 A
- Collector- Emitter Voltage VCEO Max
- 90 V
- Collector-Emitter Saturation Voltage
- 600 mV
- Pd - Power Dissipation
- 1.8 W
- Gain Bandwidth Product fT
- 120 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 200 C
- Country of Origin
- PH
- DC Collector/Base Gain hfe Min
- 60
Show more parameters (2)
- DC Current Gain hFE Max
- 200
- Unit Weight
- 0.022642 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.