ROHM Semiconductor
EMD30T2R
Bipolar Transistors - Pre-Biased TRANS DIGI BJT NPN PNP 100200MA 6PIN
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - Pre-Biased
- Series
- EMD30
- Package
- EMT-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
17 parameters- Configuration
- Dual
- Transistor Polarity
- NPN, PNP
- Typical Input Resistor
- 10 kOhms, 1 kOhms
- Typical Resistor Ratio
- 1, 10
- DC Collector/Base Gain hfe Min
- 30, 140
- Collector- Emitter Voltage VCEO Max
- 50 V, - 30 V
- Continuous Collector Current
- 100 mA, - 200 mA
- Peak DC Collector Current
- 100 mA
- Pd - Power Dissipation
- 150 mW
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 30
Show more parameters (5)
- Height
- 0.5 mm
- Length
- 1.6 mm
- Width
- 1.2 mm
- Number of Channels
- 2 Channel
- Part # Aliases
- EMD30
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.