Qorvo
QPD1006
GaN FETs 450W 50V 1.2-1.4GHz GaN IMFET
Basic Information
View Datasheet ↗- Manufacturer
- Qorvo
- Product Category
- GaN FETs
- Series
- QPD1006
- Package
- NI-50CW
- Mounting Style
- SMD/SMT
- Packaging
- Waffle
Technical Specifications
16 parameters- Transistor Polarity
- N-Channel
- Id - Continuous Drain Current
- 14 A
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 85 C
- Pd - Power Dissipation
- 445 W
- Configuration
- Single
- Country of Origin
- US
- Development Kit
- QPD1006EVB3
- Gain
- 17.8 dB
- Maximum Drain Gate Voltage
- 145 V
- Maximum Operating Frequency
- 1.4 GHz
- Minimum Operating Frequency
- 1.2 GHz
Show more parameters (4)
- Moisture Sensitive
- Yes
- Output Power
- 450 W
- Technology
- GaN
- Transistor Type
- HEMT
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.