Microchip Technology
MSCSM120AM50CT1AG
Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP1F
Basic Information
View Datasheet ↗- Manufacturer
- Microchip
- Brand
- Microchip Technology
- Product Category
- Discrete Semiconductor Modules
- Package
- SP1F
- Mounting Style
- Screw Mount
- Packaging
- Bulk
Technical Specifications
19 parameters- Product
- MOSFET-SiC SBD Modules
- Type
- MOSFET / SiC SBD
- Technology
- SiC
- Vf - Forward Voltage
- 1.5 V
- Vr - Reverse Voltage
- 1.2 kV
- Vgs - Gate-Source Voltage
- - 10 V, + 25 V
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 125 C
- Country of Origin
- PH
- Fall Time
- 25 ns
- Id - Continuous Drain Current
- 55 A
- Pd - Power Dissipation
- 245 W
Show more parameters (7)
- Rds On - Drain-Source Resistance
- 50 mOhms
- Rise Time
- 30 ns
- Transistor Polarity
- N-Channel
- Typical Turn-Off Delay Time
- 50 ns
- Typical Turn-On Delay Time
- 30 ns
- Vds - Drain-Source Breakdown Voltage
- 1.2 kV
- Vgs th - Gate-Source Threshold Voltage
- 1.8 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.