Toshiba
TTA0002(Q)
Bipolar Transistors - BJT BJT PNP -18A 180W 80 HFE -2V Trans
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - BJT
- Series
- TTA0002
- Package
- 2-21F1A-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
12 parameters- Transistor Polarity
- PNP
- Collector- Emitter Voltage VCEO Max
- - 160 V
- Collector- Base Voltage VCBO
- - 160 V
- Emitter- Base Voltage VEBO
- - 5 V
- Collector-Emitter Saturation Voltage
- - 2 V
- Maximum DC Collector Current
- - 18 A
- Gain Bandwidth Product fT
- 30 MHz
- DC Current Gain hFE Max
- 160
- Continuous Collector Current
- - 18 A
- DC Collector/Base Gain hfe Min
- 80
- Pd - Power Dissipation
- 180 W
- Unit Weight
- 0.343921 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.