Qorvo
QPD1016
RF JFET Transistors 500 Watt, 50 Volt, DC-1.7 GHz, GaN RF Transistor
Basic Information
View Datasheet ↗- Manufacturer
- Qorvo
- Product Category
- RF JFET Transistors
- Package
- NI780-2
- Mounting Style
- SMD/SMT
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Transistor Type
- HEMT
- Technology
- GaN SiC
- Gain
- 23.9 dB
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 145 V
- Vgs - Gate-Source Breakdown Voltage
- - 7 V to 1.5 V
- Id - Continuous Drain Current
- 70 A
- Output Power
- 680 W
- Maximum Drain Gate Voltage
- 55 V
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 85 C
- Pd - Power Dissipation
- 714 W
Show more parameters (4)
- Configuration
- Single
- Operating Frequency
- DC to 1.7 GHz
- Development Kit
- QPD1016EVB01
- Moisture Sensitive
- Yes
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.