STMicroelectronics
2SD1047
Bipolar Transistors - BJT High power NPN epitaxial planar bipolar transistor
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- Bipolar Transistors - BJT
- Series
- 2SD1047
- Package
- TO-3P-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
8 parameters- Transistor Polarity
- NPN
- Collector- Emitter Voltage VCEO Max
- 140 V
- Emitter- Base Voltage VEBO
- 6 V
- Gain Bandwidth Product fT
- 20 MHz
- Continuous Collector Current
- 12 A
- DC Collector/Base Gain hfe Min
- 50
- Pd - Power Dissipation
- 100 W
- Unit Weight
- 0.238311 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.