MACOM
CGHV59350F
GaN FETs GaN HEMT 5.2-5.9GHz, 350 Watt
Basic Information
View Datasheet ↗- Manufacturer
- MACOM
- Product Category
- GaN FETs
- Mounting Style
- SMD/SMT
- Packaging
- Tray
Technical Specifications
15 parameters- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 125 V
- Vgs th - Gate-Source Threshold Voltage
- - 3 V
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 85 C
- Country of Origin
- US
- Gain
- 11 dB
- Maximum Operating Frequency
- 5.9 GHz
- Minimum Operating Frequency
- 5.2 GHz
- Output Power
- 450 W
- Product
- C-Band Radar HEMTs
- Technology
- GaN
Show more parameters (3)
- Transistor Type
- GaN HEMT
- Vgs - Gate-Source Breakdown Voltage
- - 10 V, 2 V
- Unit Weight
- 1.304431 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.