ON Semiconductor
55GN01CA-TB-E
RF Bipolar Transistors SWITCHING DEVICE
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- RF Bipolar Transistors
- Series
- 55GN01CA
- Package
- CP-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
21 parameters- Transistor Type
- Bipolar Power
- Technology
- Si
- Transistor Polarity
- NPN
- DC Collector/Base Gain hfe Min
- 100
- Collector- Emitter Voltage VCEO Max
- 10 V
- Emitter- Base Voltage VEBO
- 3 V
- Continuous Collector Current
- 5 mA
- Minimum Operating Temperature
- + 25 C
- Maximum Operating Temperature
- + 150 C
- Configuration
- Single
- Collector- Base Voltage VCBO
- 20 V
- DC Current Gain hFE Max
- 180
Show more parameters (9)
- Height
- 1.1 mm
- Length
- 2.9 mm
- Operating Frequency
- 5.5 GHz
- Operating Temperature Range
- + 25 C to + 150 C
- Type
- RF Bipolar Power
- Width
- 1.5 mm
- Gain Bandwidth Product fT
- 4.5 GHz
- Maximum DC Collector Current
- 70 mA
- Pd - Power Dissipation
- 200 mW
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.