Toshiba
HN4C06J-BL(TE85L,F
Bipolar Transistors - BJT BJT Trans LFreq 120V NPN NPN 0.1A
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - BJT
- Series
- HN4C06
- Mounting Style
- SMD/SMT
Technical Specifications
13 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Dual
- Maximum DC Collector Current
- 100 mA
- Collector- Emitter Voltage VCEO Max
- 120 V
- Collector- Base Voltage VCBO
- 120 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 300 mV
- Pd - Power Dissipation
- 300 mW
- Gain Bandwidth Product fT
- 100 MHz
- Maximum Operating Temperature
- + 150 C
- Country of Origin
- JP
Show more parameters (1)
- Unit Weight
- 0.000494 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.