onsemi
NSVT1601CLTWG
Bipolar Transistors - BJT -160V -1.5A PNP LOW SATURATION BJT
Basic Information
View Datasheet ↗- Manufacturer
- onsemi
- Product Category
- Bipolar Transistors - BJT
- Series
- NST1601CL
- Package
- LFPAK-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
14 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Maximum DC Collector Current
- 2.5 A
- Collector- Emitter Voltage VCEO Max
- 160 V
- Collector- Base Voltage VCBO
- 180 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 120 mV
- Pd - Power Dissipation
- 2.2 W
- Gain Bandwidth Product fT
- 87 MHz
- Maximum Operating Temperature
- + 175 C
- Continuous Collector Current
- 1.5 A
- Country of Origin
- JP
Show more parameters (2)
- DC Collector/Base Gain hfe Min
- 140
- DC Current Gain hFE Max
- 280
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.