NXP Semiconductors
BFU730F,115
RF Bipolar Transistors NPN WIDEBAND SILICON GERMANIUM RF TRANS
Basic Information
View Datasheet ↗- Manufacturer
- NXP
- Brand
- NXP Semiconductors
- Product Category
- RF Bipolar Transistors
- Package
- SOT343F-4
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Transistor Type
- Bipolar
- Technology
- SiGe
- DC Collector/Base Gain hfe Min
- 205
- Collector- Emitter Voltage VCEO Max
- 2.8 V
- Emitter- Base Voltage VEBO
- 1 V
- Continuous Collector Current
- 5 mA
- Collector- Base Voltage VCBO
- 10 V
- DC Current Gain hFE Max
- 555
- Height
- 0.75 mm
- Length
- 2.2 mm
- Operating Frequency
- 55 GHz
- Type
- RF Silicon Germanium
Show more parameters (4)
- Width
- 1.35 mm
- Pd - Power Dissipation
- 197 mW
- Part # Aliases
- 934064614115
- Unit Weight
- 0.000235 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.