Advanced Semiconductor, Inc.
MRF5943
RF Bipolar Transistors RF Transistor
Basic Information
- Manufacturer
- Advanced Semiconductor, Inc.
- Product Category
- RF Bipolar Transistors
- Package
- SO-8
- Mounting Style
- SMD/SMT
- Packaging
- Tray
- RoHS
- Compliant (source record)
Technical Specifications
13 parameters- Transistor Type
- Bipolar Power
- Technology
- Si
- Transistor Polarity
- NPN
- DC Collector/Base Gain hfe Min
- 25
- Collector- Emitter Voltage VCEO Max
- 30 V
- Emitter- Base Voltage VEBO
- 3.5 V
- Continuous Collector Current
- 400 mA
- Maximum Operating Temperature
- + 150 C
- Configuration
- Single
- Type
- RF Bipolar Power
- Gain Bandwidth Product fT
- 1.3 GHz
- Pd - Power Dissipation
- 1 W
Show more parameters (1)
- Unit Weight
- 0.017870 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.