ROHM Semiconductor
BSM180C12P2E202
Discrete Semiconductor Modules 1200V Vdss; 204A ID SiC Mod; SICSTD02
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Discrete Semiconductor Modules
- Series
- BSMx
- Package
- Module
- Mounting Style
- Screw Mount
- Packaging
- BSMx
- RoHS
- Compliant (source record)
Technical Specifications
18 parameters- Product
- Power Semiconductor Modules
- Type
- SiC Power Module
- Vf - Forward Voltage
- 1.6 V at 180 A
- Vgs - Gate-Source Voltage
- - 6 V, 22 V
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 150 C
- Configuration
- Chopper
- Technology
- SiC
- Transistor Polarity
- N-Channel
- Typical Delay Time
- 49 ns
- Fall Time
- 32 ns
- Id - Continuous Drain Current
- 204 A
Show more parameters (6)
- Pd - Power Dissipation
- 1360 W
- Rise Time
- 36 ns
- Typical Turn-Off Delay Time
- 139 ns
- Typical Turn-On Delay Time
- 49 ns
- Vds - Drain-Source Breakdown Voltage
- 1200 V
- Vgs th - Gate-Source Threshold Voltage
- 1.6 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.