ON Semiconductor
2SC6097-E
Bipolar Transistors - BJT HIGH-CURRENT SWITCHING
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2SC6097
- Package
- TO-251-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
12 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 60 V
- Collector- Base Voltage VCBO
- 100 V
- Emitter- Base Voltage VEBO
- 6.5 V
- Collector-Emitter Saturation Voltage
- 100 mV
- Maximum DC Collector Current
- 3 A
- Gain Bandwidth Product fT
- 390 MHz
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 600
- DC Collector/Base Gain hfe Min
- 300
- Unit Weight
- 0.011993 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.