onsemi
NSVBCP68T1G
Bipolar Transistors - BJT LOW VOLTAGE-HIGH CURRENT
Basic Information
View Datasheet ↗- Manufacturer
- onsemi
- Product Category
- Bipolar Transistors - BJT
- Series
- BCP68T
- Package
- SOT-223-4
- Packaging
- MouseReel
Technical Specifications
17 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Maximum DC Collector Current
- 1 A
- Collector- Emitter Voltage VCEO Max
- 20 V
- Collector- Base Voltage VCBO
- 25 V
- Emitter- Base Voltage VEBO
- 5 V
- Pd - Power Dissipation
- 1.5 W
- Gain Bandwidth Product fT
- 60 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Country of Assembly
- MY
Show more parameters (5)
- Country of Diffusion
- MY
- Country of Origin
- MY
- DC Collector/Base Gain hfe Min
- 50 at 5 mA, 10 V, 85 at 500 mA, 1 V, 60 at 1 A, 1 V
- DC Current Gain hFE Max
- 50 at 5 mA, 10 V
- Unit Weight
- 0.006632 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.