Qorvo
QPD1019
RF JFET Transistors 500 Watt, 50 Volt, 2.7 - 3.1 GHz, GaN RF IMFET
Basic Information
View Datasheet ↗- Manufacturer
- Qorvo
- Product Category
- RF JFET Transistors
- Package
- 17.4 mm x 24 mm x 4.31 mm
- Mounting Style
- SMD/SMT
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Type
- HEMT
- Technology
- GaN SiC
- Gain
- 16.3 dB
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 150 V
- Vgs - Gate-Source Breakdown Voltage
- - 7 V to 2 V
- Id - Continuous Drain Current
- 15 A
- Maximum Drain Gate Voltage
- 55 V
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 85 C
- Pd - Power Dissipation
- 522 W
- Configuration
- Single
Show more parameters (3)
- Operating Frequency
- 2.9 GHz to 3.3 GHz
- Development Kit
- QPD1019EVB01
- Moisture Sensitive
- Yes
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.