IXYS
IXBT2N250-TR
MOSFET IXBT2N250 TR
Basic Information
View Datasheet ↗- Manufacturer
- IXYS
- Product Category
- MOSFET
- Series
- BIMOSFET
- Package
- TO-268-3
- Mounting Style
- SMD/SMT
- Packaging
- Reel
- RoHS
- Compliant (source record)
Technical Specifications
18 parameters- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 2500 V
- Id - Continuous Drain Current
- 5 A
- Vgs th - Gate-Source Threshold Voltage
- 3 V
- Vgs - Gate-Source Voltage
- 20 V
- Qg - Gate Charge
- 10.6 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 32 W
- Configuration
- Single
- Channel Mode
- Enhancement
Show more parameters (6)
- Transistor Type
- 1 N-Channel
- Forward Transconductance - Min
- 0.85 S
- Fall Time
- 178 ns
- Rise Time
- 280 ns
- Typical Turn-Off Delay Time
- 74 ns
- Typical Turn-On Delay Time
- 30 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.