IXYS
MIXA81H1200EH
IGBT Modules IGBT Module H Bridge
Basic Information
View Datasheet ↗- Manufacturer
- IXYS
- Product Category
- IGBT Modules
- Series
- MIXA81H1200
- Package
- E3-Pack
- Mounting Style
- Chassis Mount
- Packaging
- Bulk
Technical Specifications
10 parameters- Configuration
- Half Bridge
- Collector- Emitter Voltage VCEO Max
- 1.2 kV
- Collector-Emitter Saturation Voltage
- 1.8 V
- Continuous Collector Current at 25 C
- 120 A
- Gate-Emitter Leakage Current
- 500 nA
- Pd - Power Dissipation
- 390 W
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 125 C
- Maximum Gate Emitter Voltage
- 20 V
- Tradename
- XPT
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.