Central Semiconductor
BUX11
Bipolar Transistors - BJT 20A 150W 250Vcbo 200Vceo 12A 8.0Mhz
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- BUX11
- Package
- TO-3-2
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
11 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Base Voltage VCBO
- 250 V
- Collector-Emitter Saturation Voltage
- 1.5 V
- Gain Bandwidth Product fT
- 8 MHz
- DC Current Gain hFE Max
- 60 at 6 A
- Continuous Collector Current
- 20 A
- DC Collector/Base Gain hfe Min
- 20 at 6 A
- Pd - Power Dissipation
- 150 W
- Part # Aliases
- BUX11 PBFREE
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.