Infineon Technologies
FF6MR12W2M1HPB11BPSA1
MOSFET Modules 1200 V CoolSiC Mosfet Half-Bridge Module
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- MOSFET Modules
- Package
- 106.4 mm x 61.4 mm x 30.5 mm
- Mounting Style
- Screw Mount
- Packaging
- Tray
Technical Specifications
19 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 1.2 kV
- Id - Continuous Drain Current
- 200 A
- Rds On - Drain-Source Resistance
- 5.63 mOhms
- Vgs - Gate-Source Voltage
- - 10 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage
- 5.55 V
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 150 C
- Configuration
- Dual
- Country of Assembly
- DE
- Country of Origin
- AT
Show more parameters (7)
- Fall Time
- 30 ns
- Rise Time
- 18.7 ns
- Type
- Half Bridge
- Typical Turn-Off Delay Time
- 62.6 ns
- Typical Turn-On Delay Time
- 20.4 ns
- Vf - Forward Voltage
- 5.65 V
- Part # Aliases
- FF6MR12W2M1HP_B11 SP005634513
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.