ROHM Semiconductor
QS8M51HZGTR
MOSFETs TSMT8 100V 1.5A N-CH MOSFET
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- MOSFETs
- Package
- TSMT-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
22 parameters- Technology
- Si
- Transistor Polarity
- N-Channel, P-Channel
- Number of Channels
- 2 Channel
- Vds - Drain-Source Breakdown Voltage
- 100 V
- Id - Continuous Drain Current
- 1.5 A, 2 A
- Rds On - Drain-Source Resistance
- 325 mOhms, 470 mOhms
- Vgs - Gate-Source Voltage
- - 20 V, 20 V
- Vgs th - Gate-Source Threshold Voltage
- 2.5 V
- Qg - Gate Charge
- 4.7 nC, 17 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 1.5 W
Show more parameters (10)
- Channel Mode
- Enhancement
- Qualification
- AEC-Q101
- Configuration
- Dual
- Country of Origin
- JP
- Fall Time
- 15 ns, 10 ns
- Forward Transconductance - Min
- 1.9 S, 1.5 S
- Rise Time
- 10 ns, 15 ns
- Typical Turn-Off Delay Time
- 30 ns, 60 ns
- Typical Turn-On Delay Time
- 10 ns
- Part # Aliases
- QS8M51HZG
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.