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Toshiba Memory

TC58BYG0S3HBAI6

NAND Flash 1.8V 1Gb 24nm I-Temp SLC NAND (EEPROM)

Basic Information

View Datasheet ↗
Manufacturer
Toshiba
Brand
Toshiba Memory
Product Category
NAND Flash
Package
VFBGA-67
Mounting Style
SMD/SMT
Packaging
Tray
RoHS
Compliant (source record)

Technical Specifications

10 parameters
Memory Size
1 Gbit
Interface Type
Parallel
Organization
128 M x 8
Data Bus Width
8 bit
Supply Voltage - Min
1.7 V
Supply Voltage - Max
1.95 V
Minimum Operating Temperature
- 40 C
Maximum Operating Temperature
+ 85 C
Memory Type
NAND
Moisture Sensitive
Yes

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

TC58BYG0S3HBAI6 Specifications and Datasheet | ChipSourceHub