NXP Semiconductors
AFT27S006N-1000M
RF MOSFET Transistors AFT27S006N-1000M
Basic Information
View Datasheet ↗- Manufacturer
- NXP
- Brand
- NXP Semiconductors
- Product Category
- RF MOSFET Transistors
- Series
- AFT27S006N
- Package
- PLD-1.5W
- Mounting Style
- SMD/SMT
Technical Specifications
13 parameters- Transistor Polarity
- N-Channel
- Technology
- Si
- Vds - Drain-Source Breakdown Voltage
- 65 V
- Operating Frequency
- 728 MHz to 3.7 GHz
- Gain
- 16 dB
- Output Power
- 28.8 dBm
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 150 C
- Number of Channels
- 1 Channel
- Type
- RF Power MOSFET
- Vgs - Gate-Source Voltage
- + 10 V
- Vgs th - Gate-Source Threshold Voltage
- 1.6 V
Show more parameters (1)
- Part # Aliases
- 935412238598
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.