Qorvo
QPD1000
RF JFET Transistors 50-1000MHz 15W 28V SSG 19dB GaN
Basic Information
View Datasheet ↗- Manufacturer
- Qorvo
- Product Category
- RF JFET Transistors
- Series
- QPD
- Package
- QFN-8
- Mounting Style
- SMD/SMT
- Packaging
- Tray
- RoHS
- Compliant (source record)
Technical Specifications
18 parameters- Transistor Type
- HEMT
- Technology
- GaN SiC
- Gain
- 19 dB
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 28 V
- Vgs - Gate-Source Breakdown Voltage
- 100 V
- Id - Continuous Drain Current
- 817 mA
- Output Power
- 24 W
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 85 C
- Pd - Power Dissipation
- 28.8 W
- Configuration
- Single
Show more parameters (6)
- Operating Frequency
- 30 MHz to 1.215 GHz
- Operating Temperature Range
- - 40 C to + 85 C
- Development Kit
- QPD1000PCB401, QPD1000PCB402
- Moisture Sensitive
- Yes
- Vgs th - Gate-Source Threshold Voltage
- - 2.8 V
- Part # Aliases
- 1131140
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.