CEL
CE3521M4-C2
RF JFET Transistors 20GHz NF .70dB Ga 11.9dB -55C +125C
Basic Information
View Datasheet ↗- Manufacturer
- CEL
- Product Category
- RF JFET Transistors
- Package
- minimold-4
- Mounting Style
- SMD/SMT
- Packaging
- Reel
Technical Specifications
15 parameters- Transistor Type
- pHEMT
- Technology
- GaAs
- Operating Frequency
- 20 GHz
- Gain
- 11.9 dB
- Vds - Drain-Source Breakdown Voltage
- 3 V
- Vgs - Gate-Source Breakdown Voltage
- - 3 V
- Id - Continuous Drain Current
- 10 mA
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 125 C
- Pd - Power Dissipation
- 125 mW
- Configuration
- Single
- Country of Origin
- JP
Show more parameters (3)
- Forward Transconductance - Min
- 47 mS
- Gate-Source Cutoff Voltage
- - 750 mV
- NF - Noise Figure
- 0.7 dB
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.