ON Semiconductor
2SB817C-1E
Bipolar Transistors - BJT BIP PNP 12A 140V
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2SB817C
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
11 parameters- Transistor Polarity
- PNP
- Collector- Emitter Voltage VCEO Max
- 140 V
- Collector- Base Voltage VCBO
- 160 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 2 V
- Maximum DC Collector Current
- 12 A
- Pd - Power Dissipation
- 120 W
- DC Current Gain hFE Max
- 200 A
- Technology
- Si
- Continuous Collector Current
- 12 A
- Unit Weight
- 0.204589 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.