onsemi
NVVR26A120M1WST
MOSFET Modules SIC A1HPM 1200 V
Basic Information
View Datasheet ↗- Manufacturer
- onsemi
- Product Category
- MOSFET Modules
- Series
- NVVR26A120M1WST
- Package
- AHPM-15
- Mounting Style
- Screw Mount
- Packaging
- Tube
Technical Specifications
21 parameters- Technology
- SiC
- Transistor Polarity
- N-Channel
- Number of Channels
- 2 Channel
- Vds - Drain-Source Breakdown Voltage
- 1.2 kV
- Id - Continuous Drain Current
- 400 A
- Vgs - Gate-Source Voltage
- - 10 V, + 25 V
- Vgs th - Gate-Source Threshold Voltage
- 3.2 V
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 1 kW
- Configuration
- Half-Bridge
- Country of Origin
- CN
Show more parameters (9)
- Fall Time
- 51 ns
- Height
- 5 mm
- Length
- 55.2 mm
- Rise Time
- 59 ns
- Tradename
- EliteSiC
- Type
- Power Module
- Typical Turn-Off Delay Time
- 220 ns
- Typical Turn-On Delay Time
- 125 ns
- Width
- 55.2 mm
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.